HIGH DENSITY PLASMA FLUORINATED SILICON GLASS PROCESS STACK AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to use an interlayer insulation layer including a low permittivity material such as a FSG(fluorinated silicon glass) which does not bring about a problem in association with a transfer of a fluorine. CONSTITUTION: A metal feature is disposed on a semiconductor substrate so that the feature has a dielectric layer surrounding the feature. A barrier layer containing silicon is disposed on the feature to isolate the feature from the dielectric layer. Accordingly, the barrier layer prevents a diffusion of the dielectric layer in the feature.