发明名称 CAPACITOR STRUCTURE AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To provide a highly reliable chip-on-capacitor. CONSTITUTION: The capacitor (94) in a semiconductor device (20) has a lower copper plate (30) in a damascene/trench (22), barrier layers (56, 180a) disposed above the lower plate, a dielectric layer (60) disposed above the barrier layers and an upper plate (96) above the dielectric layer. Another embodiment of this invention is capacitors (296, 396) in a semiconductor device, which has two lower plates (230, 231, 330, 331) mutually separated, dielectric layers (260, 360) above the lower plate and upper plates (296, 396) above the dielectric layer which covers the lower plate, extends preferably across it. This invention further includes a method for manufacturing the capacitor of such a constitution.
申请公布号 KR20010094954(A) 申请公布日期 2001.11.03
申请号 KR20010011384 申请日期 2001.03.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 JENNIFER D. LYNCH;STAMPER ANTHONY K.;STEVEN A. SAINT ONGE;WILBUR D. PRISER
分类号 H01L21/28;H01L21/283;H01L21/70;H01L21/768;H01L21/822;H01L23/522;H01L27/02;H01L27/04;H01L27/108 主分类号 H01L21/28
代理机构 代理人
主权项
地址