发明名称 FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide structure that maintains the sufficient strength of a substrate in a filed effect transistor having a via hole. SOLUTION: The via hole is formed, where the via hole passes through the insulation region of a semiconductor layer and a buffer layer from the surface side of the semiconductor layer having an active region and the insulation one to a semiconductor substrate. A conductive layer is formed, where the conductive layer connects the semiconductor substrate to an electrode on the semiconductor layer via the via hole.
申请公布号 JP2001308108(A) 申请公布日期 2001.11.02
申请号 JP20000117994 申请日期 2000.04.19
申请人 OKI ELECTRIC IND CO LTD 发明人 OSHIMA TOMOYUKI
分类号 H01L29/812;H01L21/338;H01L29/778;(IPC1-7):H01L21/338 主分类号 H01L29/812
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