| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can perform the planarizing of the surface of an interlayer insulating film with accuracy without incurring increase in the number of processes or in the polishing time. SOLUTION: This method is one where CMP method is performed, using ceria slurry for the surface of an interlayer insulating film 8 as a process of planarization the surface of an interlayer insulating film 8 which is made, with its surface uneven on a semiconductor substrate 7, and the ceria abrasive grains 9 within the ceria slurry are left in the sidewall of the projection of the interlayer insulating film 8. The CMP method is performed using silica slurry to polish it in condition that the ceria abrasive grains are left in the sidewall of the projection of the interlayer insulating film 8.
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