| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of easily forming a very minute capacitor corresponding to high integration and the semiconductor. SOLUTION: A contact hole 2a is formed on an interlayer insulation film 2 and a barrier film 3 on a semiconductor board 1, and a plug 4 is formed in the contact hole 2a. Next, after an SiO2 film 6 is formed on the plug 4 and the interlayer insulation film 2, a recess part 6a is formed on the SiO2 film 6 so as to expose the upper face of the plug 4. After an Ir film 7 is formed on the SiO2 film 6 forming the recess part 6a, a lower electrode 8 is formed in the recess part 6a by etching back the Ir film 7 by a CMP method. The SiO2 film 6 is etched back until the barrier film 3 of a substrate is exposed, the surface of a projection-like lower electrode 8 is covered by an SBT film 9, further the SBT film 9 and the Ir film 10 are simultaneously patterned by covering the SBT film 9 by the Ir film 10, and a solid capacitor is formed by the lower electrode 8, the SBT film 9 and the Ir film 10. |
