| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element that can extend the area rate of a light reception region in a unit pixel area, and a manufacturing method of the solid-state image pickup element. SOLUTION: A trench 14 is provided at the surface side of a substrate 11, a light reception region 17 is provided at the bottom part of the trench 14, and a charge transfer region 25 is provided on the side wall of the trench 14. The charge transfer region 25 is composed of an N-type diffusion layer 26 that is formed in the side-wall surface layer of the trench, a side-wall-like transfer electrode 27 that is formed along the side wall of the trench, and an insulating film 23 that is provided between the N-type diffusion layer 26 and the transfer electrode 27. A read region 20 using the transfer electrode 27 as a read electrode is provided between the charge transfer and light reception regions 27 and 17.
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