| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be increased in a bonding quality and reliability while suppressed with the increase in manufacturing cost, and also provide a method of manufacturing the same. SOLUTION: This is a method of manufacturing a semiconductor device which comprises an interconnection and an electrode pad 1 formed of an Al alloy film formed at one end of the interconnection, This method comprises a process of forming the interconnection and the electrode pad 1 on an insulation film 3, and a process of implanting Ar ions 9 into the electrode pad 1 to improve the wettability of the electrode pad 1, The electrode pad 1 is used to bond an Au wire to. |
