| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a contact having a low contact resistance when a contact is formed for a Cr film by making an opening in an insulation film formed on the Cr film. SOLUTION: An etching mask of photoresist film having an opening pattern of contact holes is formed on a pixel transistor part 12, a gate terminal part 14, a drain terminal part 16, and a D-G junction 18 of a protective transistor. By an RIE method using an SF6 based gas as an etching gas, contact holes 40, 42, 44, 46, 48 each having a wall tapered to decrease the opening dimensions downward are opened in the pixel transistor part 12, the gate terminal part 14, a first region of the D-G junction 18, the drain terminal part 16, and a second region of the D-G junction 18.
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