SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide technology capable of adopting an ESD element in a semiconductor integrated circuit device mounting DRAM and logic LSI. SOLUTION: The high voltage resistant CMOS structure ESD element is constituted by an n-channel type MISFETQn providing a plurality of strip-like high resistant areas 9 comprising only a low impurity concentration n-type semiconductor area 4 on a part of a drain, and p-channel type MISFETQp providing the plurality of the strip-like high resistant areas 9 comprising only a low impurity concentration ptype semiconductor area 11 on a part of a source.