| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-scanning light-emitting element array which can realize a modification of the characteristics of its elements and enhancement of its internal luminous efficiency as the leakage current in the interface between the stepped parts of wirings is suppressed more than that in the conventional structure of the array by the circular structure of the mesa type light- emitting part of the array. SOLUTION: An AlGaAs layer 1 of a P-N-P-N structure is formed on a GaAs substrate 2, the layer 1 is subjected to mesa etching, the layer 1 is partially removed, mesa etched parts 6 are formed in the layer 1, and the layer 1 is covered with an SiO2 insulating film 3 including the parts 6. The upper part of the layer 1 is connected with an electrode wiring 4 via a contact hole opened in the film 3. The reference numeral 5 is a rear electrode. A mesa type light-emitting part is formed in a circle-type structure. |
