| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device high in reading precision of data by utilizing the polarization state of a ferroelectric substance film, its drive method and its manufacturing method. SOLUTION: When the data in response to the polarization state are read from the ferroelectric substance film 22 generating upward polarization or downward remaining polarization, bias is applied on a control gate electrode 23 to be read, for instance, a state where the downward remaining polarization exists is made data '1', and another state where the remaining polarization hardly exists from the state where the upward remaining polarization exists is made data '0'. Particularly, the reading precision is improved since reading current during the data '0' is nearly constant by making the state where the remaining polarization hardly exists the data '0'. In addition, the reading precision is further improved by previously inducing input to one data (for instance, the data '1').
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