| 摘要 |
PROBLEM TO BE SOLVED: To prevent needless grooves from being formed on the surface of a substrate and to prevent needless cavities from being generated in an imbedded oxide film by covering the exposed edge region of the imbedded oxide film formed by patterning with a nitride film. SOLUTION: A nitride film 21 is formed on the surface of a substrate 12 of silicon single crystal, and a surface oxide film 14 is formed on the surface of the nitride film 21. Then a resist layer 16 of specified pattern is formed on the surface of the surface oxide film 14, and the surface oxide film 14 and the nitride film 21 are etched through the mask of the resist layer 16. Then after the resist layer 16 is eliminated, the substrate 12 is cleaned and oxygen ion 23 is vertically implanted onto the surface of the substrate 12 through the mask of the surface oxide film 14. Further, after the substrate 12 is annealed at 1,300 deg.C or higher and an imbedded oxide film 13 is formed inside the substrate 12, the surface oxide film 14 is eliminated.
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