| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method that can reduce the occupation area of a bipolar transistor. SOLUTION: This semiconductor device is equipped with a substrate 1, first conductivity-type regions 4a to 4g, a collector region 3b, base regions 4c to 4e, and emitter regions 6a to 6c. The first conductivity-type regions are formed on the substrate, and have a main surface. The collector region is formed in the first conductivity-type region. The base region is positioned on the collector region in the first conductivity-type region. The emitter regions are positioned on the base region in the first conductivity-type region. In the first conductivity- type region, grooves 12b to 12e that reach the collector region, and separation grooves 12a and 12f that are arranged around the vertical bipolar transistor are formed. The inside of the grooves is filled with second conductivity-type conductive materials 13b to 13e. The inside of the separation grooves is filled with second conductivity-type separation conductive materials 13a and 13f.
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