| 摘要 |
PROBLEM TO BE SOLVED: To prevent exposure of a trimming fuse. SOLUTION: An element isolation oxide film 3, a trimming fuse 5, and an insulating film 7 between a poly-silicon and a metal are formed on a semiconductor substrate 1 (A). After having formed metal wirings 9, 9 for thick film at the position which is only 2μm apart in a horizontal direction from the center of the fuse 5 on the insulating film 7, a silicon oxide film 11a is formed, further thereupon a SOG film 11b is formed, and adopting a planarizing process, the insulating film 11 between a metal and the metal is formed. By an existence of the metal wirings 9, 9 for thick film, the SOG film 11b remains on the surface of the silicon oxide film 11a on the region of the trimming fuse 5 and then the film thickness increases (B). After forming the metal wirings 13, 13 for thick film on the insulating film 11, a silicon oxide film 15a is formed. Then a SOG film 15b is formed thereon, and adopting the planarizing process, the insulating film 15 between the metals is formed (C).
|
