| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus, capable of forming a TiN film having a thickness larger than about 400Åor particularly larger than 1,000Åand a resistivity lower than about 175μΩ.cm by the CVD technology for forming a desired TiN film thickness, through depositing a series of TiN layers. SOLUTION: Each layer is deposited by employing a CVD deposition/treatment step. During the treatment step, residual halogen (normally chlorine) is removed from the CVD deposited film. More specifically, the TiN film, having a thickness of greater than about 400Å, is prepared by a multiple deposition/treatment step process, where individual TiN layers having a thickness of less than 400Åare produced in series, to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer is CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film, formed in this manner, not only has a resistivity of smaller than about 175μΩ.cm, but is substantially free of mirocracks, but also includes films having a thickness greater than 1,000Å.
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