| 摘要 |
PROBLEM TO BE SOLVED: To reduce ON voltage and restrain the operation of a parasitic thyristor or the like. SOLUTION: In a body region 30 of an insulated gate semiconductor device 20 which is constituted as a trench IGBT and in the body region 30 in a bonded part to an emitter region 32, a high concentration region 34 is formed by using P-type semiconductor whose impurity concentration is higher than that of the body region 30, so as not to be in contact with trench gates 28. The high concentration region 34 makes carriers stored in an element flow to the emitter region 32 in the case of turn-OFF, so that the ON-operation of a parasitic thyristor can be prevented. The body region 30 is formed of P-type semiconductor whose impurity concentration is low, so that a channel can be formed even if a voltage applied to the trench gates 28 is low. As a result, the ON-state voltage can be reduced.
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