发明名称 THIN FILM TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem where light from back light is made to enter an amorphous silicon film in a part protruded from a gate electrode from a glass substrate side when a liquid crystal display device is operated, an off- leakage current of a thin film transistor is increased and performance as a pixel switch element is deteriorated. SOLUTION: The smaller one of one edge of a gate electrode which overlaps a source electrode or the other edge of the gate electrode which overlaps with a drain electrode is covered with an amorphous silicon film becoming to a channel.</p>
申请公布号 JP2001308333(A) 申请公布日期 2001.11.02
申请号 JP20000120767 申请日期 2000.04.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TERAUCHI MASAHARU
分类号 G02F1/136;G02F1/1368;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/136
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