| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage of holding electric charge and to secure ON and OFF-margins of a pixel TFT by suppressing the range of the jumping of an OFF-current by making a gate bias to be the same order as in the conventional practice when performing a counter-common inversion driving in an active matrix-type semiconductor display device and, moreover, to secure the breakdown strength of the pixel TFT, by maintaining the gate bias to be impressed on the TFT at the vicinity of the conventional voltage and to provide a new drive circuit, capable of reducing the power consumption in the drive circuit as a whole. SOLUTION: In this semiconductor display device, the voltage amplitude when performing the counter-common inversion drive can be made small, while securing the ON and OFF-margins of the pixels TFT by using a tri-stage buffer in a gate line side drive circuit and by applying buffer potentials different in a frame, in which a counter common potential obtains a positive side potential and a frame in which the counter common potential obtains a negative side potential to the buffer.
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