| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for its manufacturing by which no bowing is formed at the cross section of a via hole formed in the organic low-permittivity film, no lack of edges of an insulating film containing silicon used as an etching mask of the organic low-permittivity is generated and an organic low-permittivity film can be accurately etched. SOLUTION: A resist pattern 4 having a specified diameter of opening is formed in an interlayer insulating film formed of an organic low-permittivity film 2 and an insulating film 3 containing silicon resistant to NH3 base gas, the insulating film containing silicon is dry etched through the mask of the resist pattern and the organic low-permittivity film is etched by dry etching by using NH3 or gas containing NH3 through the etching mask of the insulating film containing silicon to accurately form an opening 5 exhibiting a high aspect ratio and whose cross section is approximately vertical.
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