发明名称 SHIELDED INTERCONNECTION FOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a shielded interconnection for reducing capacitive coupling between interconnecting lines in an integrated circuit device having interconnecting lines isolated by an interlayer dielectric. SOLUTION: Interconnecting lines are provided with a thin side wall conductive shield isolated from interconnecting lines by a thin side wall dielectric. Crosstalk between adjacent lines in an interconnection layer is reduced by a side wall shield. The thin side wall dielectric material can be selected to reduce capacitance between the side wall shield and the interconnecting lines. An interlayer dielectric can be selected to enhance defect resistance and mechanical strength during fabrication of a device. A method for fabricating shielded interconnections is also provided.
申请公布号 JP2001308184(A) 申请公布日期 2001.11.02
申请号 JP20010070270 申请日期 2001.03.13
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 JONATHAN D CHAPPURUSOKORU;IVERS THOMAS H;MCGAHAY VINCENT J;STAMPER ANTHONY K
分类号 H01L23/522;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/768;H01L21/320 主分类号 H01L23/522
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