| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming method which deposits a tantalum- containing carbon-free oxide film which does not contain carbon. SOLUTION: For depositing a gate oxide film 8, such as tantalum oxide film, etc., on the surface of a work W such as semiconductor wafer, etc., a raw material of tantalum pentachloride solid at room temperature is dissolved in a solvent, e.g. diethyl sulfur in a coordinate bond condition, and it is vaporized and fed into a processing chamber. The processing temperature is set to a comparatively low temperature enough to avoid decomposing diethyl sulfur itself. Thus, the carbon-free tantalum-containing film which does not contain carbon is deposited.
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