| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V-family compound semiconductor epitaxial wafer with excellent electric characteristics. SOLUTION: One portion of a second compound semiconductor layer 31 of the III-V-family compound semiconductor epitaxial wafer having a substrate 21, a first compound semiconductor layer 23 that is formed as a channel layer on the substrate 21, and a second compound semiconductor layer 31 where electron affinity is smaller than that of the first compound semiconductor layer 23 that is formed as an electron supply layer on the first semiconductor layer 23 is set to a high-carrier concentration layer 25, thus achieving the electrical characteristics exceeding those of planar dope by MOCVD.
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