| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device, which can prevent malfunction caused by a leakage current and variations in characteristics and in manufacturing to reduce operating voltage by increasing a coupling capacity between a floating gate and a control gate, and a method of manufacturing the memory device. SOLUTION: A photoresist 17 is formed on a polysilicon film 16 and the photoresist 17 is patterned to exist in a shape that covers a select transistor from the top of a memory cell transistor or in a shape that extends to the select transistor STr. Then the photoresist 17 is used as a mask to successively remove the polysilicon film 16, an ONO film 15 and a polysilicon film 13 by etching.
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