| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that in a self-scanning light-emitting device the condition of pnpn4-layer structure not always agree with the condition which maximizes a light-emission output as a thyristor function must be preferred while the light emitted from inside the pnpn structure is liable to light absorption, scattering and the like before it comes to the outside, resulting in poor output light efficiency. SOLUTION: A light-emitting element of pnpnpn 6-layer semiconductor structure is provided. Here, a p-type first layer and an n-type sixth layer on both ends as well as a p-type third layer and an n-type fourth layer in the center are provided with an electrode, with an pn layer given a light-emitting diode function while a pnpn 4-layer a thyristor function. A conventional light-emitting thyistor of a self-scanning light-emitting device is replaced with the light-emitting element to realize a high optical-output self-scanning light-emitting element. |
