| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can reduce a reactive current in its simple constitution and effectively takes out light to the outside to make it possible to increase its luminous intensity, and to provide a manufacturing method of the light-emitting element. SOLUTION: A semiconductor light-emitting element is constituted in a structure that an N-type GaAs buffer layer 1, an N-type clad layer 2, an undoped active layer 3, a P-type clad layer 4, a P-type intermediate band gap layer 5, and a P-type current diffusion layer 6, are laminated in order on an N-type GaAs substrate 10. A first electrode 11 is formed on the lower side of the substrate 10, while a second electrode 12 is formed on the side of a growth layer. At this time, the region of the layer 5 which is located directly under the electrode 12 is removed In the removed region, the layer 6 is laminated on the layer 4 and the bonded surface of the layer 6 to the layer 4 is put in a high- resistant state by a type II of the energy band structure. |
