| 摘要 |
PROBLEM TO BE SOLVED: To modify a conventional gallium nitride semiconductor light-emitting element into a gallium nitride semiconductor light-emitting element having more uniform characteristics, by a method wherein damage which causes the problems of reduction in a luminous intensity and increase in a leakage current to an active layer is lessened, a crack at the time of the film formation of the active layer is prevented from being generated and warpage of the whole wafer (sapphire substrate) is lessened to the utmost. SOLUTION: A gallium nitride semiconductor light-emitting element consists of an active layer 100 and a cap layer 500, which are formed on a sapphire substrate 100 which is an insulating substrate, and has a P-N junction and in this light-emitting element, there is not the P-N junction to contribute to a light emission under the lower parts of a P-type metallic electrode 910 for wire-bonding and an N-type metallic electrode 920 for wire-bonding. |
