| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treating device and substrate treating method capable of previously preventing an accident and achieving safety against the instantaneous stop of the device and the leakage of treating material. SOLUTION: In the method for treating a wafer W by exhausting the internal atmosphere of a process vessel 2 and passing the wafer through an ozone killer 10 while supplying gaseous ozone 5 to the wafer W housed in the process vessel 2, the inside of the process vessel 2 is hermetically sealed and the gaseous ozone 5 is supplied on condition that the ozone killer 10 is normal. When the treatment is interrupted, the internal atmosphere of the process vessel 2 is forcibly exhausted and in case the gas leakage occurs, the internal and ambient atmosphere of the process vessel 2 is forcibly exhausted and the supply of the gaseous ozone 5 is stopped. |
