| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capa ble of obtaining the device having high reliability by preventing a deterioration of a gate oxide film, even in the device having silicide film. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of forming a gate electrode on a semiconductor substrate, forming a source/drain region through ion implantation by using the gate electrode as a mask, and forming the silicide film at least on a surface of the gate electrode. In this case, the ion implantation is controlled, so that a dose of a tungsten becomes 0 to 5×109 atoms/cm2. Or the concentration of the tungsten in the gate electrode after the ion implantation is controlled to 0 to 3×1014 atoms/cm3.
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