| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in the conventional method that the dielectric breakdown of a gate oxide film is caused by a large difference in quantity of charges injected in the wafer plane, since the oxide film forming begins from the wafer periphery. SOLUTION: In the method of forming a film on a substrate, using a plasma CVD apparatus having a low- and high-flow rate gas lines for introducing the same reactive gas into a chamber with a flow rate difference of at least 5 times, the gas from the low-flow rate gas line is introduced into the chamber, prior to the gas from the high-flow rate gas line.
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