| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To prevent a gate insulating film from breakdown which is to be caused by the phenomenon wherein high voltage is applied to the gate insulating film of a MISFET by charges generated by plasma. SOLUTION: After a buried wiring 26 is formed, a connection hole 29 to a buried wiring 20 is formed, and a plug 30 connecting the buried wiring 20 with the buried wiring 26 is formed.
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| 申请公布号 |
JP2001308180(A) |
申请公布日期 |
2001.11.02 |
| 申请号 |
JP20000126142 |
申请日期 |
2000.04.26 |
| 申请人 |
HITACHI LTD |
发明人 |
KAZAMA HIDEO;ONISHI YOSHIFUMI |
| 分类号 |
H01L21/768;H01L21/336;H01L29/78;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
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