METHOD OF FORMING POLYCRYSTALLINE SEMICONDUCTOR FILM, DEVICE FOR FORMING THE SAME, AND METHOD OF MANUFACTURING POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To prevent a TFT against deterioration in characteristics, such as a variation in a threshold voltage, a reduction in an on-state current and others due to the effects of impurities taken into a polycrystalline semiconductor film. SOLUTION: The uppermost surface of an amorphous silicon film 3 is etched through a reverse sputtering treatment, and the amorphous silicon film 3 is crystallized by excimer laser annealing.