发明名称 HIGH THROUGHPUT COPPER CMP WITH REDUCED EROSION AND DISHING
摘要 PROBLEM TO BE SOLVED: To provide a method for polishing copper with reduced erosion and dishing, according to a multi-step polishing technique. SOLUTION: The method for polishing the copper comprises a step of polishing a substrate surface at a first removal rate on a first platen, a step of polishing a copper layer or a copper alloy layer surface and reducing the copper layer or the copper alloy layer, and a step of polishing the substrate at a second removal rate less than the first removal rate on a second platen and reducing the copper layer or the copper alloy layer, thereby planarizing the substrate surface 138 containing the copper layer or the copper alloy layer deposited on a barrier layer. Furthermore, the method comprises the steps of providing a computer-readable medium 100 bearing instructions, the instructions arranged, when executed by one or more processors, to cause the one or more processors to control a polishing system to polish the substrate surface at the first removal rate on the first platen and then polished at the second removal rate less than the first removal rate on the second platen.
申请公布号 JP2001308040(A) 申请公布日期 2001.11.02
申请号 JP20000389237 申请日期 2000.12.21
申请人 APPLIED MATERIALS INC 发明人 LI SHIJIAN;REDEKER FRED C;JOHN M WHITE;EMAMI RAMIN
分类号 B24B37/04;B24B57/02;H01L21/302;H01L21/304;H01L21/321 主分类号 B24B37/04
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