FLATTENING METHOD OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method wherein a step-difference of an underlying layer formed on a semiconductor substrate is easily and uniformly flattened without contaminating the semiconductor substrate. SOLUTION: In this flattening method of a semiconductor substrate, the underlying layer 2 having the step-difference 10 is formed on the semiconductor substrate 1. A film 3 for flattening the step-difference 10 is arranged on the underlying layer 2, an adhesive sheet 4 or the like is stuck on the film 3, and the film 3 is subjected to flattening work by peeling operation of the sheet 4.