| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the thickness of a thin film can be controlled easily with high accuracy, even when the objective substrate has a large individual difference in a single-wafer thin-film process. SOLUTION: When a single-wafer thin-film process device performs thin-film process for attaining a prescribed thickness, the device once suspends the process before the process reaches the prescribed thickness, and after measuring the film thickness obtained in the process performed thus far, starts the remaining thin film process by deciding the condition of the process, based on the measured film thickness.
|
