| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate-heating treating apparatus, which allows the high temperature and high accuracy temperature control to be reduced and the manufacturing cost of a treating system to be lowered. SOLUTION: For heat treating a wafer W, e.g. at 450 deg.C, it is heated using hot plates 51, 52, 61, 62 set to, e.g. 100 deg.C, 200 deg.C, 250 deg.C, 450 deg.C in the temperature increasing order one after another. Thus, the heating temperatures of other hot plates 51, 52, 61 than the last hot plate 62 does not need to be high, and such heating which is not at high temperatures has little influence on the uniformity of the film thickness, etc., and hence there is no need of a high accuracy temperature control. Accordingly, it is possible to reduce the number of hot plates to be temperature-controlled at high temperatures and a high accuracy, compared with those in prior art.</p> |
