| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can resolve conventional problems (the enhancement of a surge voltage, the imbalance of a current, the generation of cracks) and can realize the miniaturization of a device. SOLUTION: An insulating substrate 22 is provided on a base plate 21 for installation, and several semiconductor devices 24 are mounted on this insulating substrate 22 via a conductive plate 23. On the insulating substrate 22, the source electrode 25 is installed on one side across the conductive plate 23 and a drain electrode 26 is installed in the other side. An insulating base 27 is installed on the drain electrode 26, and thereupon a gate electrode 28 is installed. A source electrode 25 and a gate electrode 28 are commonly electrically connected to each of semiconductor devices 24 by wires 29, 30 respectively and a drain electrode 26 is electrically connected to conductive plate 23 by several wires 31. The base 27 has a configuration wherein the side facing the semiconductor device 24 is chamfered obliquely and a top of the connection region of a wire 31 is covered with this chamfered portion. The gate electrode 28 is brought as close as possible to the semiconductor device 24 side on the base 27 and is installed in the position covering the top of the connection region of the wire 31. |
