| 摘要 |
PROBLEM TO BE SOLVED: To resolve the problem of deterioration of conductivity between the conductor layer on the upper surface of an insulating board and a metal cover having different heat expansion coefficients, caused by the stress which is generated by the heat generated when a semiconductor element operates. SOLUTION: This semiconductor device is composed of the insulating board 1 having a loading part 1a of the semiconductor element 2 on the upper surface and the grounding conductor 5 on the side surface, the semiconductor element 2 loaded on the loading part 1a, the conductor layer 4 formed to surround the loading part 1a on the upper surface of the insulating substrate 1 and connected to the grounding conductor 5 electrically, and the conductive cover 3 interposing the conductor layer 4 and being connected through the conductive sealing material 6 in the upper surface of the insulating substrate 1. The conductive sealing material 6 contains a thermosetting resin as a main component and contains the conductive particles whose surface of the core which is composed of organic materials which are 5-30μm in average particle diameter and 1-50 MPa in compressive strength.
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