| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in the conventional method of sputtering method employing an Al-Si-Cu target, that Si nodules are generated when an Al- interconnection film is deposited. SOLUTION: Generation of Si nodules is prevented by depositing an Al3Ti film, having a high solid solubility of Si and an Al film in layer and heat treating at 400 deg.C or above, thereby absorbing excess Si to the Al3Ti film.
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