| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for etching treatment which can suppress the contact between an etchant within a treatment vessel and a gas outside the treatment vessel, and can sharply reduce the concentration change of etchant. SOLUTION: The contact between the etchant within a treatment vessel and the gas outside the treatment vessel is suppressed, by supplying inert gas to the vicinity of the opening within the treatment vessel, thereby forming a gas curtain in the inert gas atmosphere or in the vicinity of liquid level, when covers 6A, 6B, 6C, 6D, 6E, and 6F shift from close positions to open positions, to open an opening 1a of the treatment vessel 1.
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