| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a SOI-MOSFET wherein substrate floating effect is restrained in both an NMOS and a PMOS without deteriorating short channel effect of the PMOS, and a semiconductor device. SOLUTION: Formation of recombination center for eliminating majority carrier generated in an end portion of a drain is performed by ion implantation of an inert element. The quantity of implantation of an inert element for forming recombination center of a PMOS is set in a range wherein substrate floating effect of the PMOS is restrained and deterioration of short channel effect is restrained within an allowable value, independently of the quantity of implantation of an inert element for forming recombination center of an NMOS. As a result, substrate flouting effect is restrained in both the NMOS and the PMOS.
|
