| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device wherein a memory cell transistor having good retention characteristics and capable of suppressing the generation of joining leakage current and a peripheral transistor capable of controlling the memory cell transistor in high speed operation are formed on one semiconductor board and its manufacturing method. SOLUTION: In the semiconductor integrated circuit device and its manufacturing method, a semiconductor board having a logic circuit formation area and a memory cell formation are, a first MOS transistor formed on the logic circuit formation area, and a second MOS transistor formed on the memory cell formation area are provided. The gate electrode, the source electrode and the drain electrode of the first MOS transistor contain high melting point metal silicide, and the gate electrode out of the gate electrode, the source electrode and the drain electrode of the second MOS transistor contains the high melting point metal silicide. |
