| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor edge-light-emitting device together with its manufacturing method wherein a light-emission region is easily enlarged. SOLUTION: A semiconductor edge-light-emitting device 10 comprises a substrate 12 which is provided with a case 14 of an opaque resin with reflectivity. A transmissive resin 16 is filled between the substrate 12 and the case 14. Electrodes 18a and 18b are formed on the surface of substrate 12, and an LED chip is bonded to the electrodes 18a and 18b. The luminous surface of the semiconductor edge-light-emitting device 10 comprises surfaces 16a and 16b formed of the transmissive resin 16 as well as a surface which is parallel and continuous with the surface 16. The luminous surface is formed rough. The light outputted from an LED chip and that reflected on the case 14 are scattered on the luminous surface. |
