| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a conductive diffusion barrier having a good step coverage and desired characteristics. SOLUTION: The method for forming a conductive barrier for integrated circuit comprises (a) a step for providing a semiconductor substrate, (b) a step for depositing an initial material to form a layer, and (c) a step for implanting ions into the layer of initial material to form a desired material.
|
