Method of manufacturing capacitor of semiconductor device

摘要

The present invention discloses a method of manufacturing a TaON capacitor having a high capacity comprising the steps of forming an intermediate insulating layer on a semiconductor substrate; forming a lower electrode on the intermediate insulating layer; depositing a TaON thin film in an amorphous state on the lower electrode; annealing the amorphous TaON thin film in a vacuum state to form a crystalline TaON thin film that will serve as a dielectric layer; and forming an upper electrode on the dielectric layer made of the TaON thin film.