| 摘要 |
PURPOSE: An apparatus and a method for cleaning a wafer are provided to improve cleaning capacity and etching uniformity by performing a cleaning process, a rinsing process, and a dry process within one bath. CONSTITUTION: A single chamber(100) performs all processes such as a cleaning process, a rinsing process, and a dry process. A wafer(101) is installed in the chamber(100). A chemical and DI(DeIonized) supply line(102a) supplies chemicals or DI to the chamber(100). A chemical and DI exhaust line(103a) exhausts the chemicals or DI. A chemical injection module(104) decides a mixing ratio of the injected chemicals. An IPA(IsoPropyl Alcohol) supply module(105) injects heated IPA to the chamber(100) in order to dry the wafer(101) after the cleaning process is completed. An IPA supply line(103a) supplies the IPA from the IPA supply module(105) to the chamber(100). An IPA exhaust portion(102b) exhausts the IPA after the dry process is completed.
|
