APPARATUS AND METHODS FOR DETECTING KILLER PARTICLES DURING CHEMICAL MECHANICAL POLISHING

摘要

Disclosed is a system (200) for detecting anomalies associated with a sample (202). The system includes an objective arranged proximate to a sample (202) while the sample is undergoing chemical mechanical polishing and a beam source (230) arranged to generate an incident beam (216) and direct the incident beam through the objective (232c) and toward the sample (202) while the sample is undergoing chemical mechanical polishing. The system also includes a sensor (222) arranged to detect a scattered beam reflected from at least one anomaly associated with the sample while the sample is undergoing chemical mechanical polishing, the scattered beam being in response to the incident beam (216). The scattered beam indicates a characteristic of the anomaly, such as particle size.