发明名称 |
CHARGE COUPLED DEVICE HAVING CHARGE ACCUMULATING LAYER FREE FROM TOW-DIMENSIONAL EFFECT UNDER MINIATURIZATION AND PROCESS FOR FABRICATION THEREOF |
摘要 |
A charge coupled device has an n- type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter, wherein at least one p- type local impurity region is formed in such a manner as to form a p-n junction together with the n- type charge accumulating layer and the n- type semiconductor substrate, thereby increasing the amount of signal charge accumulated in each unit cell without sacrifice of the pulse height of the pulse signal for the substrate shutter.
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申请公布号 |
US2001035538(A1) |
申请公布日期 |
2001.11.01 |
申请号 |
US19990451770 |
申请日期 |
1999.12.01 |
申请人 |
KAWAKAMI YUKIYA;TOHYAMA SHIGERU |
发明人 |
KAWAKAMI YUKIYA;TOHYAMA SHIGERU |
分类号 |
H01L21/339;H01L27/148;H01L29/762;H04N5/335;H04N5/353;H04N5/369;H04N5/3725;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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