| 摘要 |
<p>The invention relates to semiconductor lasers and can be used for fiber-optic communication, medicine and for processing of materials. The invention is directed at concentrating the totality of a radiant energy in a glitch having a diffraction divergence for a high-power strip of wide-aperture multimode in transverse direction laser diodes lying on the focal plane of a lens. The wide-aperture and multimode laser diodes are used in the strip placed inside an external cavity. Geometrical parameters of an active medium and of the cavity are selected from a criterion of transfer of the working operation of an isolated laser diode from the multimode operation thereof into a single-mode in transverse direction operation inside the external cavity with the freshnel numbers NF= (S/2)2/μL<1, where S represents a width of the laser diode strip, μ represents the emission wavelength, and L represents the length of the cavity. The external cavity performs selection of a basic mode having Gaussian distribution for an isolated wide-aperture emitter in a transverse direction, and also of a supermode for a strip in phase. A distance between the lens and an initial stretching with a dimension of W¿0? is well over the focal length of the lens and the parameter of Reyleigh length π W0?2¿/μ, in such a way that the angular dimension of a transformed stretching is lesser than the angular direction towards the first diffractional glitch, whereby the intensity thereof is suppressed in addition to also the higher order glitches.</p> |
