| 摘要 |
A low dielectric constant insulating film resin composition for a semiconductor device, comprising a polyaryl ether-based low dielectric constant insulating film material and an antioxidant, a method of forming a low dielectric constant insulating film for a semiconductor device including the steps of coating and drying the above resin composition on the surface of a substrate, and a method of producing a semiconductor device provided with the above low dielectric constant insulating film, effectively suppressing the generation of carbon dioxide or carbon monoxide due to an oxidation reaction when forming an low dielectric constant insulating film for a semiconductor device using a polyaryl ether-based low dielectric constant material.
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