发明名称 Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
摘要 An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.
申请公布号 US2001036793(A1) 申请公布日期 2001.11.01
申请号 US20010874086 申请日期 2001.06.04
申请人 APPLIED MATERIALS, INC., A DELAWARE CORPORATION 发明人 WISWESSER ANDREAS NORBERT;PAN JUDON TONY;SWEDEK BOGUSLAW
分类号 B24B37/04;B24B49/04;B24B49/12;G01B11/06;H01L21/321;(IPC1-7):B24B49/00 主分类号 B24B37/04
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